ترجمه مقاله Investigation of the cutoff frequency of double linear halo lightly doped drain and source CNTFET

After discovering the carbon nanotube (CNT) by Aijima, scientific research about this structure are expanded due to its excellent electronic properties. One of the important properties of this structure is quasi-ballistic transport with very high carrier mobility. Using carbon nanotube, two types of field effect transistors have been discussed. The first type is Schottky barrier carbon nanotube field effect transistor (SB-CNTFET) and second type is MOSFET-like CNTFETs (MOSCNTs). The MOSCNT was more favorable because of the high on-off current ratio, but leakage current (IL) of this transistor is very high because of electron band-to-band tunneling (BTBT). In order to deal with this problem, some solutions such as drain and source with a linearly or lightly doped, source and drain extensions and asymmetric oxide thickness, have been proposed. Also, the dual material gate structure and the source and drain parameters effect on the characteristics of CNTFET are investigated. Moreover, th ...

ترجمه مقاله Investigation of the cutoff frequency of double linear halo lightly doped drain and source CNTFET

After discovering the carbon nanotube (CNT) by Aijima, scientific research about this structure are expanded due to its excellent electronic properties. One of the important properties of this structure is quasi-ballistic transport with very high carrier mobility. Using carbon nanotube, two types of field effect transistors have been discussed. The first type is Schottky barrier carbon nanotube field effect transistor (SB-CNTFET) and second type is MOSFET-like CNTFETs (MOSCNTs). The MOSCNT was more favorable because of the high on-off current ratio, but leakage current (IL) of this transistor is very high because of electron band-to-band tunneling (BTBT). In order to deal with this problem, some solutions such as drain and source with a linearly or lightly doped, source and drain extensions and asymmetric oxide thickness, have been proposed. Also, the dual material gate structure and the source and drain parameters effect on the characteristics of CNTFET are investigated. Moreover, th ...

ترجمه مقاله Investigation of the cutoff frequency of double linear halo lightly doped drain and source CNTFET

After discovering the carbon nanotube (CNT) by Aijima, scientific research about this structure are expanded due to its excellent electronic properties. One of the important properties of this structure is quasi-ballistic transport with very high carrier mobility. Using carbon nanotube, two types of field effect transistors have been discussed. The first type is Schottky barrier carbon nanotube field effect transistor (SB-CNTFET) and second type is MOSFET-like CNTFETs (MOSCNTs). The MOSCNT was more favorable because of the high on-off current ratio, but leakage current (IL) of this transistor is very high because of electron band-to-band tunneling (BTBT). In order to deal with this problem, some solutions such as drain and source with a linearly or lightly doped, source and drain extensions and asymmetric oxide thickness, have been proposed. Also, the dual material gate structure and the source and drain parameters effect on the characteristics of CNTFET are investigated. Moreover, th ...

درک ابرخازن های بر پایه مواد نانوهیبریدی با پیوستگی سطحی

                    عنوان انگلیسی:   Understanding supercapacitors based on nano-hybrid materials with interfacial conjugation   عنوان فارسی: درک ابرخازن های بر پایه مواد نانوهیبریدی با پیوستگی سطحی     رشته : مکانیک، هوافضا، برق تعداد صفحات مقاله اصلی:   11 صفحه (pdf) تعداد صفحات ترجمه:39صفحه ( word ) سال انتشار:2013   مجله   Progress in Natural Science: Materials International Volume 23, Issue 3 , June 2013, Pages 245-255           Abstract: The recent fast development of supercapacitors, also known scientifically as electrochemical capacitors, has benefited significantly from synthesis, characterisations and electrochemistry of nanomaterials. Herein, the principle of supercapacitors is explained in terms of performance characteristics and charge storage mechanisms, i.e. double layer (or interfacial) capacitance and pseudo-capacitance. The sem ...